Liu Ming, an expert in microelectronics science and technology. Currently a professor at Fudan University and director of the National Key Laboratory of ASIC. Graduated from the Department of Applied Physics at Hefei University of Technology with a bachelor's degree in 1985, obtained a master's degree from HFUT in 1988, and obtained a doctoral degree from Beijing University of Aeronautics and Astronautics in 1998. In 2008, she was supported by the National Science Fund for Distinguished Young Scholars, and in 2015, she was elected as an academician of the CAS Member. Professor Liu has long been committed to research in the field of microelectronics science and technology, making systematic and creative contributions in memory model mechanisms, material structures, core common technologies, and micro/nano processing of integrated circuits. Representative achievements include establishing a physical model of resistive variable memory, proposing and implementing basic theories and key technical methods for high-performance RRAM and integration, which have had significant international impact. Expanding new flash memory materials and structural systems, proposing new reliability characterization techniques, failure models, and physical mechanisms, providing key theoretical and technical foundations for the development of the memory industry.